Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications
نویسندگان
چکیده
This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-DD-TM-SG MOSFET. Y have been modeled using different small-signal equivalent circuit parameter which is used to find the Scattering parameters. These further employed computing S-parameters. are investigate microwave performance proposed device. The Unilateral Power Gain and maximum oscillation frequency determined evaluatethe performance. device shows a higher cut-off (f_T) as TM-SG exhibits 4.2% improvement in U_T 2.81% G_ms 6.9% G_MTPG compared TMSG. result MOSFET accordance with simulated results.
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ژورنال
عنوان ژورنال: Advances in Electrical and Electronic Engineering
سال: 2021
ISSN: ['1804-3119', '1336-1376']
DOI: https://doi.org/10.15598/aeee.v19i1.3788